This equipment is one of the important process equipment in the pre production process of semiconductor production lines, used for oxidation, diffusion, annealing, alloy and other processes in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices, etc.

♦ 氧化工藝：主要用于初始氧化層、柵氧化層、場氧化層等多種氧化介質層的制備工藝。

Oxidation process: mainly used for the preparation of various oxide dielectric layers such as initial oxide layer, gate oxide layer, field oxide layer, etc.

產品特點/Product Characteristics：

♦ 高潔凈度：包括材料、工藝環境等

High cleanliness: including materials, process environment, etc

♦ 高精度：包括爐內溫度、進氣流量、排氣壓力、運動控制等

High precision: including furnace temperature, inlet flow, exhaust pressure, motion control, etc

♦ 高安全性：包括氣體泄漏檢測、氣流檢測、人機互鎖等

High safety: including gas leakage detection, airflow detection, man-machine interlocking, etc

♦ 晶片尺寸：6/8/12英寸

Wafer size: 6/8/12 inch

♦ 制程溫度范圍：300°C-1250°C

Process temperature range: 300°C-1250°C

♦ 批次片數: 100-150片